Kies de Nederlandse taal
Course module: 201900135
Advanced Semiconductor Device Physics
Course info
Course module201900135
Credits (ECTS)5
Course typeCourse
Language of instructionEnglish
Contact R.J.E. Hueting
Examiner R.J.E. Hueting
Contactperson for the course R.J.E. Hueting
Lecturer C. Salm
Academic year2022
Starting block
Application procedureYou apply via OSIRIS Student
Registration using OSIRISYes
The main objective of this course is that
  • students know and understand both the principles behind and the functioning of advanced key semiconductor devices widely adopted in the semiconductor industry, such as heterojunction bipolar devices, FD-SOI CMOS and power field-effect devices.
Below the objectives for this course are summarized by stating the capabilities that students, after completion of this course, are expected to possess.

In the context of microelectronic (system) design:
  • students understand the use of modelling of devices, describing the behaviour of the devices in terms that are relevant to the actual design environment;
  • students are able to present the first order models of various types of junction diodes, bipolar transistors and field-effect devices in the context of the dc design level. For components where high frequency (signal or switching) behaviour is key, also the small-signal (high frequency) design level properties are known and understood;
  • students are able to relate (qualitatively) the components of these models to the physical and geometrical properties of the devices;
  • students appreciate the major challenges of device development in the context of analogue, digital and microsystem design

In the context of fundamental concepts and principle technologies:
  • students understand the principle of junction formation;
  • students poses understanding of the behaviour of charge carriers in heterojunction devices and metal-semiconductor contacts;
  • students understand a number of relevant/key issues related to CMOS devices;
  • students poses understanding of the basic working of FD-SOI CMOS, and of steep subthreshold and power devices;
  • students appreciate the major challenges in technology and trends in device development.

In the context of the contribution of this course to skills defined as Meiers criteria:
  • Disciplinary EE Knowledge: the student has a thorough mastery of parts of the relevant field extending to the forefront of knowledge (e.g., latest theories, methods, techniques).
  • EE Research Competence: The student is able to assess research within the discipline on its scientific value.
  • Intellectual skills: The student is able to recognise fallacies and is able to assess a standpoint with regard to a scientific argument in the field critically as to its value.
This course focusses on the advancements of semiconductor device physics. It covers the physics behind various semiconductor devices based on the latest developments in the field. In addition to background information of novel device concepts beyond mainstream IC technology (”beyond Moore” or ”beyond CMOS”), it also explains the physics of some of the novel devices commonly used in the so-called ”more than Moore” route, such as heterojunction bipolar transistors and power devices.

For this course prior knowledge of the basic semiconductor physics and also semiconductor device physics is needed (e.g., MOD7a).
Important note
Lectures will be given depending on the number of attendees. If that number is 5 or higher there will be lectures. If not, the student should study the material him or herself

During the teaching period of this course the type of assessment depends on the number of attendees. If that number is 5 or higher a written examination will be prepared in block 2A, otherwise an oral examination will take place. Further, throughout the year the student will be able to have an oral examination but then also he or she should do the course through self-studies.
Assumed previous knowledge
Mandatory: M7a (or equivalent):. Basic knowledge of semiconductor physics and semiconductor devices (PN junction diode and MOSFET).
Participating study
Master Electrical Engineering
Required materials
Recommended materials
Course material
“Advancements in Semiconductor Device Physics” by R.J.E. Hueting
Instructional modes

Self study with assistance


Kies de Nederlandse taal